? 2004 ixys all rights reserved 1 - 3 mdd 255 423 ixys reserves the right to change limits, test conditions and dimensions. v rsm v rrm type v dsm v drm vv 1300 1200 mdd 255-12n1 1500 1400 mdd 255-14n1 1700 1600 mdd 255-16n1 1900 1800 mdd 255-18n1 2100 2000 mdd 255-20n1 2300 2200 mdd 255-22n1 i frms = 2x450 a i favm = 2x270 a v rrm = 1200-2200 v features ? international standard package direct copper bonded al 2 o 3 -ceramic with copper base plate planar passivated chips isolation voltage 3600 v~ ul registered e 72873 applications supplies for dc power equipment dc supply for pwm inverter field supply for dc motors battery dc power supplies advantages simple mounting improved temperature and power cycling reduced protection circuits symbol conditions maximum ratings i frms t vj = t vjm 450 a i favm t c = 100 c; 180 sine 270 a i fsm t vj = 45 c; t = 10 ms (50 hz) 9500 a v r = 0 t = 8.3 ms (60 hz) 10200 a t vj = t vjm t = 10 ms (50 hz) 8400 a v r = 0 t = 8.3 ms (60 hz) 9000 a i 2 dt t vj = 45 c t = 10 ms (50 hz) 451 000 a 2 s v r = 0 t = 8.3 ms (60 hz) 437 000 a 2 s t vj = t vjm t = 10 ms (50 hz) 353 000 a 2 s v r = 0 t = 8.3 ms (60 hz) 340 000 a 2 s t vj -40...+150 c t vjm 150 c t stg -40...+125 c v isol 50/60 hz, rms t = 1 min 3000 v~ i isol 1 ma t = 1 s 3600 v~ m d mounting torque (m6) 4.5-7/40-62 nm/lb.in. terminal connection torque (m8) 11-13/97-115 nm/lb.in. weight typical including screws 750 g symbol conditions characteristic values i rrm t vj = t vjm ; v r = v rrm 30 ma v f i f = 600 a; t vj = 25 c 1.4 v v t0 for power-loss calculations only 0.8 v r t t vj = t vjm 0.6 m ? r thjc per diode; dc current 0.140 k/w per module other values 0.07 k/w r thjk per diode; dc current see mcc 255 0.18 k/w per module 0.09 k/w q s t vj = 125 c; i f = 400 a; -di/dt = 50 a/ s 700 c i rm 260 a d s creeping distance on surface 12.7 mm d a creepage distance in air 9.6 mm a maximum allowable acceleration 50 m/s 2 high power diode modules 1 2 3 dimensions in mm (1 mm = 0.0394") m8x20 data according to iec 60747 and refer to a single diode unless otherwise stated. 31 2
? 2004 ixys all rights reserved 2 - 3 mdd 255 423 ixys reserves the right to change limits, test conditions and dimensions. 0 25 50 75 100 125 150 0 100 200 300 400 0 100 200 300 400 500 0 25 50 75 100 125 150 110 10 5 10 6 0.001 0.01 0.1 1 0 2000 4000 6000 8000 10000 0 100 200 300 400 500 0 250 500 750 1000 1250 1500 i 2 t i favm i davm a p tot w t a t c s t ms t a 2 s 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 450 500 fsm a a i favm w p tot t a r l 50 150 0 100 200 100 300 500 0 200 400 600 50 150 0 100 200 0 5 10 15 20 25 80 % v rrm t vj = 45c t vj = 150c 50 hz v r = 0 v t vj = 45c t vj = 150c 180 sin 120 60 30 dc a 180 sin 120 60 30 dc 0.8 1.2 0.2 0.3 0.4 0.6 r thka k/w 0.1 2 x mdd255 circuit b2u 0.15 0.08 0.06 r thka k/w 0.5 0.1 0.2 0.3 t vj = 125c v r = 600 v t vj = 125c v r = 600 v i f = 400 a i f = 400 a i rm di f /dt a/s a t rr di f /dt a/s s fig. 1 surge overload current i fsm : crest value, t: duration fig. 2 i 2 t versus time (1-10 ms) fig. 3 maximum forward current at case temperature fig. 4 power dissipation vs. forward current and ambient temperature (per diode) fig. 6 single phase rectifier bridge:power dissipation vs. direct output current and ambient temperature r = resistive load, l = inductive load fig. 5 typ. peak reverse current i rm versus -di f /dt fig. 7 typ. recovery time t rr versus -di f /dt
? 2004 ixys all rights reserved 3 - 3 mdd 255 423 ixys reserves the right to change limits, test conditions and dimensions. fig. 8 three phase rectifier bridge: power dissipation vs. direct output current and ambient temperature fig. 9 transient thermal impedance junction to case (per diode) fig. 10transient thermal impedance junction to heatsink (per diode) t z thjk s t 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.00 0.05 0.10 0.15 0.20 0.25 0.30 k/w z thjc i davm p tot 0 25 50 75 100 125 150 0 200 400 600 800 0 500 1000 1500 2000 2500 a 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.00 0.05 0.10 0.15 0.20 0.25 c t a w k/w s 3 x mdd255 circuit b6u 0.3 0.2 0.15 0.1 0.06 0.03 0.4 r thka k/w dc 180 120 60 30 dc 30 60 120 180 r thjc for various conduction angles d: d r thjc (k/w) dc 0.139 180 0.148 120 0.156 60 0.176 30 0.214 constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.0066 0.00054 2 0.0358 0.098 3 0.0831 0.54 4 0.0129 12 r thjk for various conduction angles d: d r thjk (k/w) dc 0.179 180 0.188 120 0.196 60 0.216 30 0.254 constants for z thjk calculation: ir thi (k/w) t i (s) 1 0.0066 0.00054 2 0.0358 0.098 3 0.0831 0.54 4 0.0129 12 5 0.04 12
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